Title :
Multi-Level Operation of Fully CMOS Compatible WOX Resistive Random Access Memory (RRAM)
Author :
Chien, W.C. ; Chen, Y.C. ; Chang, K.P. ; Lai, E.K. ; Yao, Y.D. ; Lin, P. ; Gong, J. ; Tsai, S.C. ; Hsieh, S.H. ; Chen, C.F. ; Hsieh, K.Y. ; Liu, R. ; Lu, Chih-Yuan
Author_Institution :
Macronix Int. Co., Ltd., Hsinchu
Abstract :
The multi-level operation of WOx based RRAM has been investigated. Improvement of our WOx process has produced an extended linear R-V region for our devices. By adding an electrical forming process and a program-verify algorithm we have demonstrated stable 2-bit/cell operation, with potential for 3-bit/cell. The reliability of the MLC operation has been examined and very stable high temperature retention, robust read disturb immunity and initial cycling endurance of >1,000 times have been demonstrated.
Keywords :
CMOS memory circuits; integrated circuit reliability; random-access storage; tungsten compounds; CMOS compatibility; WOx; WOx process; electrical forming; high temperature retention; initial cycling endurance; multilevel operation; program-verify algorithm; resistive random access memory; robust read disturb immunity; Energy consumption; Fabrication; Materials science and technology; Plasma temperature; Random access memory; Robustness; Temperature dependence; Thermal stability; Tungsten; Voltage;
Conference_Titel :
Memory Workshop, 2009. IMW '09. IEEE International
Conference_Location :
Monterey, CA
Print_ISBN :
978-1-4244-3762-7
DOI :
10.1109/IMW.2009.5090599
