Title :
Device architectures based on graphene channels
Author :
Baus, M. ; Echtermeyer, T.J. ; Szafranek, B.N. ; Lemme, M.C. ; Kurz, H.
Author_Institution :
Appl. Micro & Optoelectron. GmbH, Aachen
Abstract :
Graphene is a possible candidate for advanced channel materials in future field effect transistors. This presentation gives a brief overview about recent experimental results in the field of graphene transistors for future electronic applications.
Keywords :
carbon nanotubes; field effect transistors; CMOS; field effect transistors; graphene channel devices; graphene transistors; CMOS technology; Carbon nanotubes; Dielectric substrates; FETs; MOSFET circuits; Optical saturation; Semiconductor materials; Silicon; Transistors; Voltage; CMOS; carbon nanotubes; graphene; silicon;
Conference_Titel :
Integrated Circuit Design and Technology and Tutorial, 2008. ICICDT 2008. IEEE International Conference on
Conference_Location :
Austin, TX
Print_ISBN :
978-1-4244-1810-7
Electronic_ISBN :
978-1-4244-1811-4
DOI :
10.1109/ICICDT.2008.4567293
