Analysis of nonlinear memory effects on the linearity of a SiC MESFET

With experimental characterizations based on a pulsed I-V and pulsed S-parameters measurement set-up, we investigate the trapping and thermal behavior of SiC MESFETs. It is shown that electrical performances are strongly affected by substrate traps and by temperature. We demonstrate the capability of a transistor model that takes into account these effects to simulate power amplifiers. In the case of complex modulations used in third generation wireless telephony, we compute the consequences of memory effects on the ALCR linearity criterion.