DocumentCode :
2170467
Title :
25W C-Band Highly Efficient on Board Hybrid Amplifier
Author :
Darbandi, A. ; Zoyo, M. ; Touchais, J.Y. ; Lévèque, H.
Author_Institution :
Alcatel Space Industries BP 1187 26 avenue J.F. Champollion 31037 Toulouse France. Phone: (33) + 5.34.35 57.69, e-mail: alireza.darbandi-tehrani@space.alcatel.fr
fYear :
2002
fDate :
23-26 Sept. 2002
Firstpage :
1
Lastpage :
4
Abstract :
A very high efficient, low distortion C-band power amplifier using a linear and non-linear models of the PHEMT devices has been developed. Single stage amplifier fabricated with 4×18mm gate width PHEMT devices exhibits a power output of 44 dBm at 2dB of gain compression, a linear gain of 11.5dB and an associated PAE from 50% to 52% in the frequency range of 3.6-3.9GHz. These excellent results are performed by developing an accurate non-linear model of the PHEMT device, the 2.5D electromagnetic simulation of the passive structures and optimizing the output matching network of the amplifier by using a high dielectric substrate with low insertion loss.
Keywords :
Dielectric substrates; Electromagnetic devices; Electromagnetic modeling; Frequency; Gain; High power amplifiers; Impedance matching; Nonlinear distortion; PHEMTs; Power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2002. 32nd European
Conference_Location :
Milan, Italy
Type :
conf
DOI :
10.1109/EUMA.2002.339280
Filename :
4140360
Link To Document :
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