DocumentCode
2170488
Title
Characterisation of PHEMT intermodulation behaviour for highly linear MMIC power amplifier design
Author
Pagani, M. ; Argento, D. ; Bignamini, M. ; Francesco, I. De ; Favre, G. ; Meazza, A. ; Mornata, A. ; Palomba, F.
Author_Institution
ERICSSON LAB ITALY, Via Cadorna, 73 - 20090 - Vimodrone (MI) - Italy
fYear
2002
fDate
23-26 Sept. 2002
Firstpage
1
Lastpage
4
Abstract
In this paper the intermodulation distortion (IMD) behaviour of a 0.25 power PHEMT is investigated under several device operating conditions. An extensive experimental device characterisation, together with numerical simulations using suitable non-linear transistor models is carried out. Experimental data were compared with different transistor models in order to understand the effect of the various cell parameters on the device IMD3 response. The data collected were applied in the design of a highly linear power amplifier family, covering different frequency ranges.
Keywords
Data analysis; Distortion measurement; High power amplifiers; Impedance measurement; Linearity; MMICs; Nonlinear distortion; PHEMTs; Performance evaluation; Power measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2002. 32nd European
Conference_Location
Milan, Italy
Type
conf
DOI
10.1109/EUMA.2002.339281
Filename
4140361
Link To Document