• DocumentCode
    2170517
  • Title

    Test Cost Analysis for 3D Die-to-Wafer Stacking

  • Author

    Taouil, Mottaqiallah ; Hamdioui, Said ; Beenakker, Kees ; Marinissen, Erik Jan

  • Author_Institution
    Comput. Eng. Lab., Delft Univ. of Technol., Delft, Netherlands
  • fYear
    2010
  • fDate
    1-4 Dec. 2010
  • Firstpage
    435
  • Lastpage
    441
  • Abstract
    The industry is preparing itself for three-dimensional stacked ICs (3D-SICs), a technology that promises heterogeneous integration with higher performance and lower power dissipation at a smaller footprint. Several 3D stacking approaches are under development. From a yield point of view, Die-to-Wafer (D2W) stacking seems the most favorable approach, due to the ability of Known Good Die stacking. Minimizing the test cost for such a stacking approach is a challenging task. Every manufactured chip has to be tested, and any tiny test saving per 3D-SIC impacts the overall cost, especially in high-volume production. This paper establishes a cost model for D2W SICs and investigates the impact of the test cost for different test flows. It first introduces a framework covering different test flows for 3D D2W ICs. Subsequently, it proposes a test cost model to estimate the impact of the test flow on the overall 3D-SIC cost. Our simulation results show that (a) test flows with pre-bond testing significantly reduce the overall cost, (b) a cheaper test flow does not necessary result in lower overall cost, (c) test flows with intermediate tests (performed during the stacking process) pay off, (d) the most cost-effective test flow consists of pre-bond tests and strongly depends on the stack yield, hence, adapting the test according the stack yield is the best approach to use.
  • Keywords
    costing; integrated circuit testing; integrated circuit yield; three-dimensional integrated circuits; 3D die-to-wafer stacking; 3D-SIC; cost model; cost-effective test flow; prebond tests; test cost analysis; three dimensional stacked IC; Packaging; Semiconductor device modeling; Silicon carbide; Solid modeling; Stacking; Three dimensional displays; Tin; 3D manufacturing cost; 3D test cost; 3D test flow; Die-to-Wafer stacking; Through-Silicon-Via;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Test Symposium (ATS), 2010 19th IEEE Asian
  • Conference_Location
    Shanghai
  • ISSN
    1081-7735
  • Print_ISBN
    978-1-4244-8841-4
  • Type

    conf

  • DOI
    10.1109/ATS.2010.80
  • Filename
    5692285