• DocumentCode
    2170520
  • Title

    A Fully-Manufacturable 0.5μm SiGe BiCMOS Technology for Wireless Power Amplifier Applications

  • Author

    Ramachandran, V. ; Joseph, A.J. ; Johnson, J.B. ; Gallagher, M.D. ; Brandt, P.-O. ; Tilly, L. ; Greenberg, D.R. ; Ansley, W.E. ; Gogineni, U. ; Harame, D.L. ; Dunn, J.S.

  • Author_Institution
    IBM Microelectronics Division, Essex Junction, VT, vidhar@us.ibm.com
  • fYear
    2002
  • fDate
    23-26 Sept. 2002
  • Firstpage
    303
  • Lastpage
    306
  • Abstract
    We present for the first time a fully-manufacturable 0.5μm/3.3V SiGe BiCMOS technology that supports multiple mode (GSM/PCS/WCDMA) power amplifier applications, highlighting HBT device design, safe-operating area, and module performance. This technology features a high- breakdown transistor (BVCBO > 20V), with fT exceeding 25GHz, along with a suite of device elements that is fully compatible with the IBM´s mature 0.5μm SiGe BiCMOS technology. PA design is discussed and hardware measurements presented demonstrating that this SiGe BiCMOS technology meets the demanding ruggedness, linearity and efficiency requirements for wireless PA applications.
  • Keywords
    BiCMOS integrated circuits; Electric breakdown; GSM; Germanium silicon alloys; Heterojunction bipolar transistors; High power amplifiers; Multiaccess communication; Personal communication networks; Power amplifiers; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2002. 32nd European
  • Conference_Location
    Milan, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.2002.339282
  • Filename
    4140362
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2170520