• DocumentCode
    2170665
  • Title

    A comparison of oxidation induced stress and defectivity in SIMOX and bonded SOI wafers

  • Author

    Mendicino, M. ; Yang, I. ; Cave, N. ; Veeraraghavan, S. ; Gilbert, P.

  • Author_Institution
    Dept. of Mater. Res. & Strategic Technol., Motorola Inc., Austin, TX, USA
  • fYear
    1997
  • fDate
    6-9 Oct 1997
  • Firstpage
    132
  • Lastpage
    133
  • Abstract
    We have shown that the trench liner oxidation step in Mesa or shallow trench isolation can affect stress in active Si areas. Significant differences in the response to that stress were observed between SIMOX and Bonded SOI wafers. Our results indicate that a threshold for stress relaxation exists in trench-isolated structures which is much larger for Bonded SOI wafers than for SIMOX with TBOX =3700 Å
  • Keywords
    SIMOX; SIMOX; bonded SOI wafer; defectivity; mesa isolation; shallow trench isolation; stress relaxation; trench liner oxidation; Crystalline materials; Isolation technology; Laboratories; Oxidation; Research and development; Silicon on insulator technology; Stress; Switches; Temperature measurement; Wafer bonding;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1997. Proceedings., 1997 IEEE International
  • Conference_Location
    Fish Camp, CA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-3938-X
  • Type

    conf

  • DOI
    10.1109/SOI.1997.634968
  • Filename
    634968
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2170665