DocumentCode :
2170851
Title :
A self-adaptive system architecture to address transistor aging
Author :
Khan, Omer ; Kundu, Sandip
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts, Amherst, MA
fYear :
2009
fDate :
20-24 April 2009
Firstpage :
81
Lastpage :
86
Abstract :
As semiconductor manufacturing enters advanced nanometer design paradigm, aging and device wear-out related degradation is becoming a major concern. Negative Bias Temperature Instability (NBTI) is one of the main sources of device lifetime degradation. The severity of such degradation depends on the operation history of a chip in the field, including such characteristics as temperature and workloads. In this paper, we propose a system level reliability management scheme where a chip dynamically adjusts its own operating frequency and supply voltage over time as the device ages. Major benefits of the proposed approach are (i) increased performance due to reduced frequency guard banding in the factory and (ii) continuous field adjustments that take environmental operating conditions such as actual room temperature and the power supply tolerance into account. The greatest challenge in implementing such a scheme is to perform calibration without a tester. Much of this work is performed by a hypervisor like software with very little hardware assistance. This keeps both the hardware overhead and the system complexity low. This paper describes the entire system architecture including hardware and software components. Our simulation data indicates that under aggressive wear-out conditions, scheduling interval of days or weeks is sufficient to reconfigure and keep the system operational, thus the run time overhead for such adjustments is of no consequence at all.
Keywords :
MOSFET; calibration; semiconductor device models; semiconductor device reliability; semiconductor device testing; software architecture; virtual machines; aggressive wear-out conditions; calibration; co-designed virtual machine; device lifetime degradation; hardware components; negative bias temperature instability; operating frequency; self-adaptive system architecture; semiconductor manufacturing; software components; system level reliability management scheme; transistor aging; voltage supply; Aging; Degradation; Frequency; Hardware; Nanoscale devices; Negative bias temperature instability; Niobium compounds; Semiconductor device manufacture; Titanium compounds; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Design, Automation & Test in Europe Conference & Exhibition, 2009. DATE '09.
Conference_Location :
Nice
ISSN :
1530-1591
Print_ISBN :
978-1-4244-3781-8
Type :
conf
DOI :
10.1109/DATE.2009.5090637
Filename :
5090637
Link To Document :
بازگشت