Title :
An impact analysis of gate resistance on static and dynamic dissipation of IGBT modules
Author :
Hu, Shao-Wei ; Zhu, Yang-Jun ; Duan, Yao-Yu
Author_Institution :
Opt. Commun. Technol. Inst., Chongqing Univ. of Posts & Telecommun., Chongqing, China
Abstract :
Gate resistor (RG) has a significant impact on the performances of drive circuit. At first, this paper theoretically analyzes the influence of gate resistor on those parameters including switching behavior, electromagnetic interference (EMI), overvoltage and dv/dt induced current. Then it discusses how to select a suitable drive module for the selected RG from the view of applications. The recommended gate resistors in the applications are also given. At last, some principles and techniques in circuit layout are talked. This paper can provide some references for circuit designers.
Keywords :
driver circuits; electromagnetic interference; insulated gate bipolar transistors; overvoltage; resistors; EMI; IGBT module; circuit layout; drive circuit; dv-dt induced current; dynamic dissipation; electromagnetic interference; gate resistance; gate resistor; impact analysis; overvoltage; static dissipation; switching behavior; Electromagnetic interference; Insulated gate bipolar transistors; Layout; Logic gates; Performance evaluation; Resistors; Switches; EMI; IGBT; driver circuit; gate resistor; overvoltage; switching behavior;
Conference_Titel :
Electronics, Communications and Control (ICECC), 2011 International Conference on
Conference_Location :
Ningbo
Print_ISBN :
978-1-4577-0320-1
DOI :
10.1109/ICECC.2011.6066394