Yield and Reliability of Cu Capped with CoWP using a Self-Activated Process

Author

Gambino, J. ; Wynne, J. ; Gill, J. ; Mongeon, S. ; Meatyard, D. ; Bamnolker, H. ; Hall, L. ; Li, N. ; Hernandez, M. ; Little, P. ; Hamed, M. ; Ivanov, I.

Author_Institution

IBM Microelectron., Essex Junction, VT

fYear

2006

fDate

5-7 June 2006

Firstpage

30

Lastpage

32

Abstract

Via and metal resistance, capacitance, stress migration lifetime, and high voltage leakage are characterized for Cu interconnects capped with either CoWP or CoWP + SiN. The CoWP is formed by a self-activated process using DMAB as a reducing agent, providing a very uniform CoWP film. Low via resistance and high stress migration lifetime are observed, even for relatively thin CoWP films without an SiN cap. The leakage current at high fields (3.0 MV/cm) is actually lower with a CoWP cap compared to an SiN cap

Keywords

cobalt compounds; copper; electromigration; integrated circuit interconnections; reliability; silicon compounds; stress effects; CoWP; Cu; DMAB; SiN; copper interconnects; dymethylamine borane; high voltage leakage; metal resistance; reducing agent; self-activated process; stress migration lifetime; via resistance; CMOS image sensors; Capacitance; Copper; Dielectric devices; Electromigration; Monitoring; Silicon compounds; Stress; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648637

Filename

1648637