Title :
Enhanced spin lifetime in semiconductors with applied electric fields
Author :
Ioakeimidi, K. ; Brachmann, A. ; Clendenin, J.E. ; Garwin, E.L. ; Kirby, R.E. ; Maruyama, T. ; Prescott, C.Y. ; Prepost, R. ; Mulhollan, G.A. ; Bierman, J.C.
Author_Institution :
Stanford Linear Accel. Center, Menlo Park
Abstract :
The GaAsP/GaAs superlattice (SL) structure has been widely recognized as the most efficient spin polarized electron source with 90% maximum polarization and more than 1% quantum efficiency. The main spin depolarization mechanisms in these structures are: interband absorption smearing due to band-edge fluctuations, hole scattering between the heavy hole (HH) and light hole (LH) states that causes a broadening of the LH band, spin precession due to an effective magnetic field generated by the lack of crystal inversion symmetry and spin orbit coupling.
Keywords :
semiconductor superlattices; spin polarised electron emission; applied electric fields; band-edge fluctuations; crystal inversion symmetry; enhanced spin lifetime; hole scattering; interband absorption smearing; spin orbit coupling; spin polarized electron; superlattice structure; Cathodes; Electrons; Extraterrestrial measurements; Gallium arsenide; Light scattering; Optical polarization; Particle scattering; Schottky barriers; Semiconductor device doping; Superlattices;
Conference_Titel :
Lasers and Electro-Optics, 2007 and the International Quantum Electronics Conference. CLEOE-IQEC 2007. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-0931-0
Electronic_ISBN :
978-1-4244-0931-0
DOI :
10.1109/CLEOE-IQEC.2007.4386779
