• DocumentCode
    2170997
  • Title

    Study on Large-signal Linearity and Efficiency of AlGaN/GaN MODFETs

  • Author

    Hsu, Shawn S.H. ; Valizadeh, Pouya ; Pavlidis, Dimitris ; Moon, Jeong S. ; Micovic, M. ; Wong, Danny ; Hussain, T.

  • Author_Institution
    Department of Electrical Engineering and Computer Science, The University of Michigan, Ann Arbor, MI 48109-2122, USA
  • fYear
    2002
  • fDate
    23-26 Sept. 2002
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Linearity and efficiency of AlGaN/GaN MODFETs were investigated under large-signal conditions. The power-added-efficiency (PAE) of 0.25×200 ¿m2 devices was found to be ~33% and ¿45% without and with harmonic tuning. Third-order Intermodulation (IMD3) was also measured using the two-tone technique. Third-order Intercept Point (IP3) of ~ 29 dBm at Pin=15 dBm was obtained at f0=5 GHz (¿f= 10 MHz). Load-pull contours showed that the impedance values for best PAE and Pout are very close. IP3 was found to be insensitive to the gate bias voltage. In addition, high efficiency and high linearity can be achieved simultaneously with the assistance of harmonic termination.
  • Keywords
    Aluminum gallium nitride; Frequency; Gallium nitride; HEMTs; Impedance; Linearity; MODFETs; Power generation; Power system harmonics; Tuners;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2002. 32nd European
  • Conference_Location
    Milan, Italy
  • Type

    conf

  • DOI
    10.1109/EUMA.2002.339300
  • Filename
    4140380
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2170997