A low distortion GaAs quadrature modulator IC

Author

Itoh, J. ; Nakatsuka, T. ; Sato, K. ; Imagawa, Y. ; Uda, T. ; Yokoyama, T. ; Maeda, M. ; Ishikawa, O.

Author_Institution

Electron. Res. Lab., Matsushita Electr. Corp., Japan

fYear

1998

fDate

11-8 June 1998

Firstpage

55

Lastpage

58

Abstract

A low distortion GaAs quadrature modulator IC with on-chip active 90/spl deg/ phase-shifter was fabricated by using high linearity GaAs MESFET technology for wideband wireless applications. The IC showed OIP3 of +16 dBm, CLR of -40 dBc, and IRR of -40 dBc at supply voltage of 5.0 V, dissipation current of 70 mA and carrier frequency of 600 MHz. Excellent EVM smaller than 1.0% and ACPR of 60 dBc were also obtained for 4 Mbps QPSK signal with Pout of -10 dBm.

Keywords

III-V semiconductors; MESFET integrated circuits; UHF integrated circuits; electric distortion; gallium arsenide; modulators; quadrature phase shift keying; 4 Mbit/s; 5 V; 600 MHz; 70 mA; GaAs; GaAs MESFET technology; low distortion; onchip active phase-shifter; quadrature modulator IC; wideband wireless applications; Application specific integrated circuits; Frequency; Gallium arsenide; Linearity; MESFET integrated circuits; Phase distortion; Phase modulation; Quadrature phase shift keying; Voltage; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE

Conference_Location

Baltimore, MD, USA

ISSN

1097-2633

Print_ISBN

0-7803-4439-1

Type

conf

DOI

10.1109/RFIC.1998.682047

Filename

682047