DocumentCode
2171103
Title
2005 International Conference on Indium Phosphate and Related Materials (IEEE Cat. No. 05CH37633)
fYear
2005
fDate
8-12 May 2005
Abstract
The following topics were covered:- indium phosphide; international technology roadmap for semiconductors perspective; III-V nanoelectronics; InP based ballistic nanodevices; experimental characteristics; theoretical characteristics; sub-THz oscillation; THz oscillation; resonant tunneling diode; slot antenna; designing; modelling; III-V mobile-gate; optical input; silicon substrate; ohmic behavior; solid-phase reaction; Cu-Zr alloy; alloy composition; novel compact InP-based monolithic; tunable differential Mach-Zehnder interferometer; wavelength converter; WDM (de)multiplexer; selective area MOVPE; channel selector; post-growth quantum well intermixing; hydrogen passivation; cavity lasers fabrication; superlattice quantum dot; light emitting diodes; InAlAs current blocking layer insertion; laser operation; SET-RESET latch IC; high-speed MOBILE D-flip flops; digital signal circuits; mixed signal circuits; collector HBTs; GaAs; vertical scaling; planarized; InGaAs heterojunction bipolar transistors; structure operating; current density; CML static divider implemented; topological characteristics; MBE growth; Ga(In)As growth; InAs quantum dots; quantum energy levels; InAsP quantum wires; electroabsorption modulator; quantum well structure; quantum-cascade laser; semiconductor optical amplifier; thermophotovoltac device; carrier density; optical waveguide switching; waveguide photodiode; metal-insulator-semiconductor field effect transistor; ohmic contact; photoluminescence property; nanowire; thermal annealing; pin diode; MOVPE; quantum well laser;.
Keywords
MISFET; Mach-Zehnder interferometers; antennas; ballistic transport; carrier density; flip-flops; heterojunction bipolar transistors; indium compounds; light emitting diodes; nanoelectronics; optical fabrication; optical resonators; optical switches; optoelectronic devices; quantum cascade lasers; quantum well devices; quantum well lasers; resonant tunnelling diodes; semiconductor optical amplifiers; vapour phase epitaxial growth; Cu-Zr alloy; III-V mobile-gate; III-V nanoelectronics; InAlAs current blocking layer; MBE growth; MOVPE; SET-RESET latch IC; THz oscillation; alloy composition; annealing; ballistic nanodevices; cavity lasers fabrication; channel selector; current density; demultiplexer; digital signal circuits; electroabsorption modulator; heterojunction bipolar transistors; high-speed MOBILE D-flip flops; hydrogen passivation; indium phosphide; international technology roadmap for semiconductors perspective; laser operation; light emitting diodes; metal-insulator-semiconductor field effect transistor; ohmic behavior; optical input; optical switches; optical waveguide switching; optoelectronic devices; photodiode; photoluminescence property; post-growth quantum well intermixing; quantum energy levels; quantum wires; quantum-cascade laser; resonant tunneling diode; semiconductor optical amplifier; silicon substrate; slot antenna; solid-phase reaction; sub-THz oscillation; superlattice quantum dot; topological characteristics; tunable differential Mach-Zehnder interferometer; wavelength converter;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
Conference_Location
Glasgow, Scotland
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517401
Filename
1517401
Link To Document