Novel polysilicon sidewall gate silicon-on-sapphire MOSFET for power amplifier applications

Author

Johnson, R.A. ; Kasa, S.D. ; De la Houssaye, R.D. ; Garcia, G.A. ; Lagnado, I. ; Asbeck, P.M.

Author_Institution

California Univ., San Diego, La Jolla, CA, USA

fYear

1997

fDate

6-9 Oct 1997

Firstpage

136

Lastpage

137

Abstract

We report the processing and DC and microwave characteristics of a novel thin-film silicon-on-sapphire MOS transistor which utilizes a sidewall process to realize a deep sub-micron gate length without the use of lithography. The device also incorporates an asymmetric lightly doped drain region for high breakdown voltage. Devices with 0.15 and 0.25 μm gate lengths have been fabricated. A FET with a 0.25 μm gate length and 1.0 μm LDD length had an f_t=9 GHz, f_max=27 GHz and breakdown voltage of 13 volts

Keywords

elemental semiconductors; power MOSFET; power amplifiers; sapphire; silicon; silicon-on-insulator; thin film transistors; 0.15 micron; 0.25 micron; 13 V; 9 to 27 GHz; DC characteristics; Si-Al₂O₃; asymmetric lightly doped drain region; breakdown voltage; deep sub-micron gate length; microwave characteristics; polysilicon sidewall gate thin-film silicon-on-sapphire MOSFET; power amplifier; Etching; FETs; Lithography; MOSFET circuits; Oceans; Optical amplifiers; Power MOSFET; Power amplifiers; Silicides; Surveillance;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1997. Proceedings., 1997 IEEE International

Conference_Location

Fish Camp, CA

ISSN

1078-621X

Print_ISBN

0-7803-3938-X

Type

conf

DOI

10.1109/SOI.1997.634970

Filename

634970