Low-k properties and integration processes enabling reliable interconnect scaling to the 32 nm technology node

Author

Ikeda, A. ; Travaly, Y. ; Humbert, A. ; Hoofman, R.J.O.M. ; Li, Y.-L. ; Tokei, Zs. ; Iacopi, F. ; Michelon, J. ; Bruynseraede, C. ; Willegems, M. ; Hendrickx, D. ; Van Aelst, J. ; Struyf, H. ; Versluijs, J. ; Heylen, N. ; Carbonell, L. ; Richard, O. ; Ben

Author_Institution

Imec, Leuven

fYear

2006

fDate

5-7 June 2006

Firstpage

42

Lastpage

44

Abstract

Single damascene (SD) Cu/Aurora^reg ULK interconnects with a minimum spacing of 50nm are achieved by using a metal hard mask (MHM) integration scheme, which enables to perform the resist ash before dielectric etch. This patterning scheme is used in combination with a low damage etch technique based on sidewall protection. Interconnect performance and reliability can be further improved by using Aurora^reg ULK high modulus (HM), a low-k film with a reduced diffusivity as compared to Aurora ULK, and a comparable k-value of 2.7. The MHM approach results in a limited increase in integrated k-value by 0.1 for ULK HM vs. 0.3 for Aurora^reg ULK. The median time dependent dielectric breakdown (TDDB) lifetime is well above the 10 years criterion for spacings down to the 50nm. Finally, the MHM integration scheme enabled fabrication of dual damascene interconnects with Aurora^reg ULK HM

Keywords

etching; integrated circuit interconnections; low-k dielectric thin films; masks; nanopatterning; 32 nm; 50 nm; Cu; ULK interconnect; damage etch technique; dielectric etch; integration process; interconnect scaling; low-k films; low-k property; metal hard mask; patterning scheme; single damascene; time dependent dielectric breakdown; Ash; Chemistry; Dielectric materials; Etching; Plasma applications; Plasma materials processing; Polymers; Protection; Resists; Strips;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648641

Filename

1648641