DocumentCode
2171237
Title
InP based ballistic nanodevices
Author
Cappy, Alain ; Galloo, Jean-Sebastien ; Bollaert, Sylvain ; Roelens, Yannick ; Mateos, Javier ; Gonzalez, Tomas ; Knap, W.
Author_Institution
IEMN, CNRS, Villeneuve d´´Ascq, France
fYear
2005
fDate
8-12 May 2005
Firstpage
9
Lastpage
12
Abstract
The paper presents the state of the art and the future trends in the field of AlInAs/GaInAs/InP based nanometre devices, in particular ballistic T junctions and plasma wave transistors.
Keywords
III-V semiconductors; aluminium compounds; ballistic transport; gallium arsenide; indium compounds; nanoelectronics; AlInAs-GaInAs-InP; ballistic nanodevices; ballistic transport junctions; nanometre devices; plasma wave transistors; Ballistic transport; Electron mobility; Fabrication; Geometry; Indium phosphide; Nanoscale devices; Plasma temperature; Plasma waves; Rectifiers; Shape;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517406
Filename
1517406
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