DocumentCode
2171246
Title
Electron Scattering in Narrow Metal Wires
Author
Gall, D. ; Purswani, J.M. ; Timochevski, V. ; Ke, Y. ; Guo, H.
Author_Institution
Rensselaer Polytech. Inst., Troy, NY
fYear
2006
fDate
5-7 June 2006
Firstpage
57
Lastpage
59
Abstract
A combined experimental and theoretical approach is used to develop a fundamental understanding of electron scattering at Cu surfaces. The resistivity of single crystal Cu(001) grown on MgO(001) by magnetron sputtering increases with decreasing layer thickness, due to diffuse surface scattering. Non-equilibrium ab initio quantum mechanical transport calculations indicate that atomic level surface roughness causes a dramatic increase in electron scattering, leading to increased resistivity at reduced length-scales. The here developed models will, in the future, predict the material and surface-structure requirements that lead to specular scattering which, in turn, yields high-conductivity Cu at reduced length scales
Keywords
electrical conductivity; electrical resistivity; electron mobility; electron transport theory; integrated circuit metallisation; sputtering; surface scattering; Cu; MgO; copper surface; diffuse surface scattering; electron scattering; level surface roughness; magnetron sputtering; material requirement; narrow metal wires; quantum mechanical transport; specular scattering; surface-structure requirements; Atomic layer deposition; Conductivity; Electrons; Particle scattering; Predictive models; Quantum mechanics; Rough surfaces; Sputtering; Surface roughness; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2006 International
Conference_Location
Burlingame, CA
Print_ISBN
1-4244-0104-6
Type
conf
DOI
10.1109/IITC.2006.1648645
Filename
1648645
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