• DocumentCode
    2171246
  • Title

    Electron Scattering in Narrow Metal Wires

  • Author

    Gall, D. ; Purswani, J.M. ; Timochevski, V. ; Ke, Y. ; Guo, H.

  • Author_Institution
    Rensselaer Polytech. Inst., Troy, NY
  • fYear
    2006
  • fDate
    5-7 June 2006
  • Firstpage
    57
  • Lastpage
    59
  • Abstract
    A combined experimental and theoretical approach is used to develop a fundamental understanding of electron scattering at Cu surfaces. The resistivity of single crystal Cu(001) grown on MgO(001) by magnetron sputtering increases with decreasing layer thickness, due to diffuse surface scattering. Non-equilibrium ab initio quantum mechanical transport calculations indicate that atomic level surface roughness causes a dramatic increase in electron scattering, leading to increased resistivity at reduced length-scales. The here developed models will, in the future, predict the material and surface-structure requirements that lead to specular scattering which, in turn, yields high-conductivity Cu at reduced length scales
  • Keywords
    electrical conductivity; electrical resistivity; electron mobility; electron transport theory; integrated circuit metallisation; sputtering; surface scattering; Cu; MgO; copper surface; diffuse surface scattering; electron scattering; level surface roughness; magnetron sputtering; material requirement; narrow metal wires; quantum mechanical transport; specular scattering; surface-structure requirements; Atomic layer deposition; Conductivity; Electrons; Particle scattering; Predictive models; Quantum mechanics; Rough surfaces; Sputtering; Surface roughness; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2006 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    1-4244-0104-6
  • Type

    conf

  • DOI
    10.1109/IITC.2006.1648645
  • Filename
    1648645