Title :
UV/EB Cure Mechanism for Porous PECVD/SOD Low-k SiCOH Materials
Author :
Nakao, Shin-Ichi ; Ushio, Jiro ; Ohno, Takahisa ; Hamada, Tomoyuki ; Kamigaki, Yoshiaki ; Kato, Manabu ; Yoneda, Katsumi ; Kondo, Seiichi ; Kobayashi, Nobuyoshi
Author_Institution :
Semicond. Leading Edge Technol., Inc., Tsukuba
Abstract :
The mechanism of UV and EB cure processes for porous low-k SiCOH materials was investigated by using experimental results obtained using PECVD and SOD films as well as simulated results. Both UV and EB cures induced dielectric constant change and Young´s modulus improvement because Si-OH elimination (moisture removal) and cross-link formation occurred during film shrinkage. Excess UV curing, however, caused defects in the porous SiCOH film, as indicated by ESR analysis. The mechanism discussed in this work is applicable to most UV/EB cure systems and PECVD/SOD SiCOH materials for 45-nm-node Cu interconnects
Keywords :
copper; curing; integrated circuit interconnections; low-k dielectric thin films; plasma CVD coatings; porous materials; 45 nm; Cu; EB cure process; ESR analysis; SiCOH; UV cure process; Young modulus improvement; copper interconnects; cross-link formation; dielectric constant change; film shrinkage; moisture removal; porous PECVD-SOD low-k materials; Chemical analysis; Curing; Dielectric constant; Dielectric materials; Lead compounds; Materials science and technology; Moisture; Optical films; Paramagnetic resonance; Semiconductor materials;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648648
