DocumentCode
2171354
Title
Metallization in Memory Device: Present & Future
Author
Lee, Sang Woo ; Choi, Gil Heyun ; Kim, Sung Tae ; Chung, U-in ; Moon, Joo Tae
Author_Institution
Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin
fYear
2006
fDate
5-7 June 2006
Firstpage
69
Lastpage
72
Abstract
In last 10 years, application of metallization in semiconductor has been expanded greatly. In this article, metallization technology and schemes in memory devices was reviewed in terms of its needs and requirements. Also new processes and concepts were proposed
Keywords
integrated circuit metallisation; integrated memory circuits; memory device; semiconductor metallization; Capacitors; Contact resistance; Dry etching; Electrodes; Gas insulated transmission lines; Leakage current; Metallization; Plasma temperature; Random access memory; Silicides;
fLanguage
English
Publisher
ieee
Conference_Titel
Interconnect Technology Conference, 2006 International
Conference_Location
Burlingame, CA
Print_ISBN
1-4244-0104-6
Type
conf
DOI
10.1109/IITC.2006.1648649
Filename
1648649
Link To Document