Title :
Metallization in Memory Device: Present & Future
Author :
Lee, Sang Woo ; Choi, Gil Heyun ; Kim, Sung Tae ; Chung, U-in ; Moon, Joo Tae
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Yongin
Abstract :
In last 10 years, application of metallization in semiconductor has been expanded greatly. In this article, metallization technology and schemes in memory devices was reviewed in terms of its needs and requirements. Also new processes and concepts were proposed
Keywords :
integrated circuit metallisation; integrated memory circuits; memory device; semiconductor metallization; Capacitors; Contact resistance; Dry etching; Electrodes; Gas insulated transmission lines; Leakage current; Metallization; Plasma temperature; Random access memory; Silicides;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648649
