Title :
Ohmic behavior and solid-phase reaction between Cu-Zr alloy in various composition and n-InP
Author :
Shibata, Seiichi ; Takeyama, Mayumi B. ; Noya, Atsushi ; Hashizume, Tamotsu ; Hasegawa, Hideki
Author_Institution :
Dept. of Electr. & Electron. Eng., Kitami Inst. of Technol., Japan
Abstract :
The solid-phase reaction and/or diffusion at the contact interface of a Cu-Zr amorphous alloy film on InP varying the alloy composition around Cu60Zr40 were investigated so as to examine the correlation with the ohmic behavior of the contacts. The Cu60Zr40/n-InP contact showed a linear I-V characteristic with extremely low contact resistance (≤1×10-6 Ωcm2) after rapid thermal annealing (RTA) at 500°C. It was revealed that the solid-phase reaction at the Cu-Zr/n-InP interface is sensitive to the alloy composition, and the well-controlled Cu diffusion at contact interface is essential to obtain ohmic behavior in the Cu-Zr metallized InP contact.
Keywords :
amorphous state; contact resistance; copper alloys; diffusion; indium compounds; interface phenomena; ohmic contacts; rapid thermal annealing; semiconductor-metal boundaries; surface chemistry; thin films; zirconium alloys; 500 C; Cu diffusion; Cu-Zr amorphous alloy film; Cu-Zr-n-InP interface; Cu60Zr40-InP; Cu60Zr40-n-InP contact interface; alloy composition; contact interface diffusion; contact resistance; linear I-V characteristic; ohmic behavior; rapid thermal annealing; solid-phase reaction; Amorphous materials; Contact resistance; Copper alloys; Electrodes; Indium phosphide; Metallization; Ohmic contacts; Rapid thermal annealing; Sputtering; Thermal resistance;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517409
