Ohmic behavior and solid-phase reaction between Cu-Zr alloy in various composition and n-InP

Author

Shibata, Seiichi ; Takeyama, Mayumi B. ; Noya, Atsushi ; Hashizume, Tamotsu ; Hasegawa, Hideki

Author_Institution

Dept. of Electr. & Electron. Eng., Kitami Inst. of Technol., Japan

fYear

2005

fDate

8-12 May 2005

Firstpage

21

Lastpage

24

Abstract

The solid-phase reaction and/or diffusion at the contact interface of a Cu-Zr amorphous alloy film on InP varying the alloy composition around Cu₆₀Zr₄₀ were investigated so as to examine the correlation with the ohmic behavior of the contacts. The Cu₆₀Zr₄₀/n-InP contact showed a linear I-V characteristic with extremely low contact resistance (≤1×10^-6 Ωcm²) after rapid thermal annealing (RTA) at 500°C. It was revealed that the solid-phase reaction at the Cu-Zr/n-InP interface is sensitive to the alloy composition, and the well-controlled Cu diffusion at contact interface is essential to obtain ohmic behavior in the Cu-Zr metallized InP contact.

Keywords

amorphous state; contact resistance; copper alloys; diffusion; indium compounds; interface phenomena; ohmic contacts; rapid thermal annealing; semiconductor-metal boundaries; surface chemistry; thin films; zirconium alloys; 500 C; Cu diffusion; Cu-Zr amorphous alloy film; Cu-Zr-n-InP interface; Cu₆₀Zr₄₀-InP; Cu₆₀Zr₄₀-n-InP contact interface; alloy composition; contact interface diffusion; contact resistance; linear I-V characteristic; ohmic behavior; rapid thermal annealing; solid-phase reaction; Amorphous materials; Contact resistance; Copper alloys; Electrodes; Indium phosphide; Metallization; Ohmic contacts; Rapid thermal annealing; Sputtering; Thermal resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517409

Filename

1517409