Title :
Development of a wafer-level burn-in test socket for fine-pitch BGA interconnect
Author :
Qiao, Q. ; Gordon, M.H. ; Schmidt, W.F. ; Li, Li ; Ang, S.S. ; Huang, Biao
Author_Institution :
Arkansas Univ., Fayetteville, AR, (USA). High Density Electron. Center, HiDEC
Abstract :
Contact beam structures for fine pitch (0.5-mm) test socket that will mate with 95/5 lead/tin solder balls (50±5 μm in diameter) were fabricated by conventional integrated circuit processing technology. A range of dimensions for contact beam structure (cross and bridge) were tested for mechanical behavior and electrical performance. Non-linear finite element models (ANSYS 5.5) were used to predict the force and stress between the copper thin film beam structure and the solder ball. To avoid plastic deformation of the solder ball, numerical analysis suggests that the contact force on 50 μm solder balls should be lower than 17 mN. The yield strength of sputtered copper thin film (2 μm) is inferred from experimental and numerical data to be in the range of 2.80-3.09 GPa. The best cross and bridge structures are presented in addition to a new “Meander” structure which, numerically, shows the best potential
Keywords :
ball grid arrays; electric connectors; fine-pitch technology; finite element analysis; integrated circuit interconnections; yield strength; 0.5 mm; ANSYS 5.5 program; PbSn-Cu; bridge structure; contact force; copper thin film beam; cross structure; electronic packaging; fine-pitch BGA interconnect; integrated circuit processing; lead-tin solder ball; meander structure; nonlinear finite element model; numerical analysis; wafer-level burn-in test socket; yield strength; Bridge circuits; Circuit testing; Contacts; Copper; Integrated circuit testing; Lead; Plastic films; Sockets; Sputtering; Tin;
Conference_Titel :
Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-7803-5908-9
DOI :
10.1109/ECTC.2000.853316