• DocumentCode
    2171414
  • Title

    Development of a wafer-level burn-in test socket for fine-pitch BGA interconnect

  • Author

    Qiao, Q. ; Gordon, M.H. ; Schmidt, W.F. ; Li, Li ; Ang, S.S. ; Huang, Biao

  • Author_Institution
    Arkansas Univ., Fayetteville, AR, (USA). High Density Electron. Center, HiDEC
  • fYear
    2000
  • fDate
    2000
  • Firstpage
    1147
  • Lastpage
    1151
  • Abstract
    Contact beam structures for fine pitch (0.5-mm) test socket that will mate with 95/5 lead/tin solder balls (50±5 μm in diameter) were fabricated by conventional integrated circuit processing technology. A range of dimensions for contact beam structure (cross and bridge) were tested for mechanical behavior and electrical performance. Non-linear finite element models (ANSYS 5.5) were used to predict the force and stress between the copper thin film beam structure and the solder ball. To avoid plastic deformation of the solder ball, numerical analysis suggests that the contact force on 50 μm solder balls should be lower than 17 mN. The yield strength of sputtered copper thin film (2 μm) is inferred from experimental and numerical data to be in the range of 2.80-3.09 GPa. The best cross and bridge structures are presented in addition to a new “Meander” structure which, numerically, shows the best potential
  • Keywords
    ball grid arrays; electric connectors; fine-pitch technology; finite element analysis; integrated circuit interconnections; yield strength; 0.5 mm; ANSYS 5.5 program; PbSn-Cu; bridge structure; contact force; copper thin film beam; cross structure; electronic packaging; fine-pitch BGA interconnect; integrated circuit processing; lead-tin solder ball; meander structure; nonlinear finite element model; numerical analysis; wafer-level burn-in test socket; yield strength; Bridge circuits; Circuit testing; Contacts; Copper; Integrated circuit testing; Lead; Plastic films; Sockets; Sputtering; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components & Technology Conference, 2000. 2000 Proceedings. 50th
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-7803-5908-9
  • Type

    conf

  • DOI
    10.1109/ECTC.2000.853316
  • Filename
    853316