Title :
Wide Band Frequency Characterization of High Permittivity Dielectrics (High-K) for RF MIM Capacitors Integrated in BEOL
Author :
Lacrevaz, T. ; Fléchet, B. ; Farcy, A. ; Torres, J. ; Vo, T.T. ; Bermond, C. ; Cueto, O. ; Defaÿ, E. ; Gros-Jean, M. ; Blampey, B. ; Angénieux, G. ; Piquet, J. ; De Crécy, F.
Author_Institution :
LACH, Univ. de Savoie
Abstract :
High permittivity insulators (high-k) are progressively introduced in high-speed integrated passives and devices in order to optimize circuit performances. However, high-k properties are expected to vary with frequency as relaxation and resonance mechanisms occur. It is necessary to analyze and evaluate high-k behaviour from DC to microwave frequency. Real permittivity (K or epsiv\´r) and losses (eepsiv"r) extraction is required over a wide band of frequency to select the most suitable insulator. The proposed method enables the characterization of as deposited thin (down to 60 nm) planar dielectrics integrated below a copper coplanar wave-guide up to 40 GHz. Results of Ta2O5 and STO insulators are presented in this paper
Keywords :
MIM devices; coplanar waveguides; high-k dielectric thin films; tantalum compounds; thin film capacitors; BEOL; RF MIM capacitor; STO insulators; Ta2O5; copper coplanar waveguide; high permittivity dielectrics; high-k behaviour; thin planar dielectrics; wide band frequency characterization; Dielectrics and electrical insulation; High K dielectric materials; High speed integrated circuits; High-K gate dielectrics; MIM capacitors; Mechanical factors; Permittivity; Radio frequency; Resonance; Wideband;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648651
