A metallurgical prescription for electromigration (EM) reliability improvment in scaled-down, Cu dual damascene interconnects

Author

Tada, M. ; Abe, M. ; Ohtake, H. ; Furutake, N. ; Tonegawa, T. ; Motoyama, K. ; Tohara, M. ; Ito, F. ; Ueki, M. ; Takeuchi, T. ; Saito, S. ; Fujii, K. ; Sekine, M. ; Hayashi, Y.

Author_Institution

Syst. Devices Res. Labs., NEC Corp., Sagamihara

fYear

2006

fDate

5-7 June 2006

Firstpage

89

Lastpage

91

Abstract

Electromigration (EM)-derived, void-nucleation and its growth have been investigated in 65-nm node, dual damascene interconnects (DDIs), and the effects of impurity-doping as well as adhesion-strength to SiCN-capping layer (CAP) are discussed regarding the EM-reliability improvement. It is found that reductive surface-treatment of Cu line improves the adhesion to the SiCN-CAP, elongating the incubation time of voiding at the via-bottom. The Al-doping is effective in suppressions both of the void nucleation and the growth, or the drift velocity. Consequently, the Al-doped, dilute Cu-alloy with the strong interface of the Cu/CAP improves the EM lifetime by 50 times refer to that of the conventional pure-Cu. Blocking all migration paths in Cu DDIs is essential for the EM-reliability improvement in 65nm-node LSIs and beyond

Keywords

aluminium alloys; copper alloys; electromigration; integrated circuit interconnections; nucleation; voids (solid); 65 nm; Al; Cu; SiCN; capping layer; copper dual damascene interconnects; electromigration reliability improvement; metallurgical prescription; void-nucleation; Adhesives; Artificial intelligence; Electromigration; Indium tin oxide; Leg; Metallization; National electric code; Stress; Surface treatment; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648654

Filename

1648654