Title :
Stress Engineering in CuILow-k Interconnects by using UV-Cure of Cu Diffusion Barrier Dielectrics
Author :
Goto, Kinya ; Kodama, Daisuke ; Suzumura, Naohito ; Hashii, Shinobu ; Matsumoto, Masahiro ; Miura, Noriko ; Furusawa, Takeshi ; Matsuura, Masazumi ; Asai, Koyu
Author_Institution :
Renesas Technol. Corp., Itami
Abstract :
In this paper, we discuss the possibility of stress engineering in the Cu/low-k interconnect reliability. We mention the film characteristics of UV cured SiCN and SiCO. A large stress change from compressive to tensile stress was observed. Through TEG demonstration, it was found that UV-cured SiCN and SiCO film make it possible to reduce SIV failure without degradation to other interconnect reliability
Keywords :
carbon compounds; copper; curing; integrated circuit interconnections; low-k dielectric thin films; nitrogen compounds; reliability; stress effects; SiCN; SiCO; TEG demonstration; UV-curing; copper diffusion barrier dielectrics; interconnect reliability; low-k interconnects; stress engineering; Compressive stress; Dielectric measurements; Leakage current; Optical films; Refractive index; Reliability engineering; Silicon carbide; Tensile stress; Testing; Thickness measurement;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648656
