Stress Engineering in CuILow-k Interconnects by using UV-Cure of Cu Diffusion Barrier Dielectrics

Author

Goto, Kinya ; Kodama, Daisuke ; Suzumura, Naohito ; Hashii, Shinobu ; Matsumoto, Masahiro ; Miura, Noriko ; Furusawa, Takeshi ; Matsuura, Masazumi ; Asai, Koyu

Author_Institution

Renesas Technol. Corp., Itami

fYear

2006

fDate

5-7 June 2006

Firstpage

95

Lastpage

97

Abstract

In this paper, we discuss the possibility of stress engineering in the Cu/low-k interconnect reliability. We mention the film characteristics of UV cured SiCN and SiCO. A large stress change from compressive to tensile stress was observed. Through TEG demonstration, it was found that UV-cured SiCN and SiCO film make it possible to reduce SIV failure without degradation to other interconnect reliability

Keywords

carbon compounds; copper; curing; integrated circuit interconnections; low-k dielectric thin films; nitrogen compounds; reliability; stress effects; SiCN; SiCO; TEG demonstration; UV-curing; copper diffusion barrier dielectrics; interconnect reliability; low-k interconnects; stress engineering; Compressive stress; Dielectric measurements; Leakage current; Optical films; Refractive index; Reliability engineering; Silicon carbide; Tensile stress; Testing; Thickness measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648656

Filename

1648656