Title :
A High Efficiency InGaP/GaAs HBT Power Amplifier MMIC for the 5GHz Wireless-LAN Application
Author :
Koh, H. ; Sakuno, K. ; Kawamura, H. ; Amano, Y. ; Hasegawa, M. ; Kagoshima, K. ; Shirakawa, K. ; Takahashi, N. ; Liu, Y. ; Oka, T. ; Fujita, K. ; Yamashita, M. ; Matsumoto, N. ; Sato, H.
Author_Institution :
Advanced Technology Research Laboratories, Sharp Corporation, 2613-1 Ichinomoto-cho, Tenri-shi, Nara 632-8567, Japan. (Phone)+81-743-65-2485, (Fax)+81-743-65-2487, E-mail: koh@mic.tnr.sharp.co.jp
Abstract :
An InGaP/GaAs two-stage HBT linear power amplifier MMIC for the 5GHz Wireless-LAN Application was developed. By using a novel linearizer and a small-size via-hole technology, the power amplifier showed high output power (19dBm) with high power-added-efficiency (PAE : 18.5%), sufficient gain (21.0dB) and high linearity (4.78% error vector magnitude : EVM) at supply voltage 3.3V. It is the highest PAE in the power amplifier MMIC for the 5GHz Wireless-LAN application ever reported.
Keywords :
CMOS technology; Circuits; Energy consumption; Gallium arsenide; Heterojunction bipolar transistors; High power amplifiers; MMICs; Power amplifiers; Power generation; Resistors;
Conference_Titel :
Microwave Conference, 2002. 32nd European
Conference_Location :
Milan, Italy
DOI :
10.1109/EUMA.2002.339324
