Title :
The using of Dual-Material Gate MOSFET in suppressing Short-Channel Effects: A review
Author :
Zheng, Chang-yong
Author_Institution :
Sch. of Electron. & Inf. Eng., Anhui Univ. of Archit., Hefei, China
Abstract :
This paper reviews four typical examples of using Dual-Material Gate MOSFET in suppressing Short-Channel Effects. Then a novel device structure called the double doping gate (DDG) Lightly-doped-drain (LDD) MOSFET is presnted. This novel gate structure takes advantage of material work function. The model is simulated with a 2-D device simulator MEDICI. The simulation result shows that an appropriate threshold voltage can be gotten by changing the doping concentration of polysilicon. Meanwhile, the driving capacity is greatly improved compared with the conventional MOSFET. The process of the structure is not complicated which can be easily achieved today.
Keywords :
MOSFET; semiconductor doping; 2D device simulator; MEDICI; doping concentration; double doping gate; driving capacity; dual-material gate MOSFET; gate structure; lightly-doped-drain MOSFET; material work function; polysilicon; short-channel effects; Degradation; Doping; Electric fields; Logic gates; MOSFET circuits; Materials; Reliability; Dual-Material (DMG); MOSFETs; short-channel effects; simulation;
Conference_Titel :
Electronics, Communications and Control (ICECC), 2011 International Conference on
Conference_Location :
Ningbo
Print_ISBN :
978-1-4577-0320-1
DOI :
10.1109/ICECC.2011.6066420
