Title :
Electromigration Results with Large Sample Size for Dual Damascene Structures in a Copper/CVD Low-k Dielectric Technology
Author :
Filippi, R.G. ; Christiansen, C. ; Li, B. ; Gill, J. ; McLaughlin, P.S. ; Demarest, J.J. ; Wang, P.-C.
Author_Institution :
IBM Syst. & Technol. Group, Hopewell Junction, NY
Abstract :
The reliability of a two-level electromigration structure stressed under various conditions is described. The structure consists of Cu dual damascene metallization with SiCOH as the low-k dielectric. A new electromigration test system is implemented to greatly increase the sample size without significantly increasing the hardware requirements. Due to the presence of two failure modes, the statistical behavior is described by a bimodal lognormal failure distribution. Failure analysis indicates that early failures occur in the Cu vias while late failures occur in the Cu lines. Comparable current density exponent and activation energy values are obtained for both failure modes, suggesting similar void formation mechanisms
Keywords :
copper; dielectric materials; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; log normal distribution; silicon compounds; CVD low-k dielectric technology; Cu; SiCOH; activation energy values; bimodal lognormal failure distribution; copper low-k dielectric technology; current density exponent; dual damascene metallization; dual damascene structures; electromigration structure; electromigration test system; failure analysis; statistical behavior; void formation mechanisms; Copper; Current density; Dielectrics; Electromigration; Failure analysis; Hardware; Integrated circuit technology; Metallization; Stress; System testing;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648657
