Title :
Realization of square quantum-well structure InP/GaInAs/InP by organometallic vapor phase epitaxy
Author :
Tabuchi, Motohiro ; Hisadome, S. ; Ohtake, Y. ; Lee, W.S. ; Takeda, Y.
Author_Institution :
Venture Bus. Lab., Nagoya Univ., Japan
Abstract :
The InP/Ga0.47In0.53As/InP structures were grown on InP [001] substrates by low-pressure organometallic vapor phase epitaxy (OMVPE) and analyzed by X-ray crystal truncation rod (CTR) scattering measurement. It was demonstrated that an actually square quantum-well structure InP/GaInAs/InP can be realized using the OMVPE by controlling the growth temperature and the growth interruption time. It was obvious that the quantum-well structure was very close to the designed one at the atomic scale for the sample of which growth interruption time was 30 s and growth temperature was 560°C. In order to determine the growth conditions, the X-ray CTR scattering measurement was essentially important, since it had been unable to clarify the interface structure without this measurement technique.
Keywords :
III-V semiconductors; MOCVD coatings; X-ray scattering; gallium arsenide; indium compounds; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 30 s; 560 C; InP; InP [001] substrates; InP-Ga0.47In0.53As-InP; InP-Ga0.47In0.53As-InP square quantum-well structures; X-ray crystal truncation rod scattering measurement; growth interruption time; growth temperature; interface structure; organometallic vapor phase epitaxy; Atomic measurements; Epitaxial growth; Indium phosphide; Measurement techniques; Particle scattering; Phase measurement; Quantum wells; Substrates; Temperature control; X-ray scattering;
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
Print_ISBN :
0-7803-8891-7
DOI :
10.1109/ICIPRM.2005.1517419
