Title :
3D Crystalline Structures of Stress Induced Voiding in Cu Interconnects by Focused Ion Beam and Electron Backscattered Diffraction
Author :
Lee, Hyo-Jong ; Han, Heung Nam ; Kang, Suk Hoon ; Sun, Jeong-Yun ; Kim, Do Hyun ; Oh, Kyu Hwan
Author_Institution :
Sch. of Mater. Sci. & Eng., Seoul Nat. Univ.
Abstract :
The planar and cross-sectional crystalline analyses were performed on the stress induced voiding (SIV). The SIV was initiated at the triple junction of grain boundaries, not at the junction of twin and grain boundaries. The void grew preferentially in one of the grains joining at the triple junction. From stress calculation based on the measured crystalline structure, the voided grain is the stress concentration
Keywords :
copper; crystal structure; electron backscattering; focused ion beam technology; grain boundaries; integrated circuit interconnections; stress effects; voids (solid); 3D crystalline structures; Cu; copper interconnects; cross-sectional crystalline analyses; electron backscattered diffraction; focused ion beam; grain boundaries; stress concentration; stress induced voiding; Copper; Crystallization; Diffraction; Electron beams; Grain boundaries; High temperature superconductors; Ion beams; Silicon compounds; Stress; Testing;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648662
