DocumentCode :
2171868
Title :
Tungsten buried growth by using thin flow-liner for small collector capacitance in InP HBT
Author :
Miyamoto, Yasuyuki ; Ishida, Masashi ; Nonaka, Toshihiro ; Yamamoto, Tohru ; Furuya, Kazuhito
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Japan
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
90
Lastpage :
93
Abstract :
To realize small CBC, condition of buried growth of tungsten wire in InP was studied. By increase of flow speed (50 cm/s to 3 m/s), HBT with tungsten wire showed small CBC (0.6 fF).
Keywords :
III-V semiconductors; buried layers; capacitance; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; tungsten; 0.6 fF; InP; InP HBT; W; collector capacitance; flow speed; microwave bipolar transistors; thin flow-liner; tungsten buried growth; tungsten wire; Capacitance; Electrodes; Etching; Heterojunction bipolar transistors; Indium phosphide; Rough surfaces; Surface roughness; Temperature; Tungsten; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517427
Filename :
1517427
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2171868
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