• DocumentCode
    2171891
  • Title

    BOX quality as measured by hydrogen-anneal-induced positive charge transport

  • Author

    Lawrence, R.K. ; Hughes, H.L. ; Stahlbush, R.E. ; Ma, D.I. ; Twigg, M.E.

  • Author_Institution
    ARACOR, Sunnyvale, CA, USA
  • fYear
    1997
  • fDate
    6-9 Oct 1997
  • Firstpage
    142
  • Lastpage
    143
  • Abstract
    The transport of positive charge introduced by hydrogen annealing has been found to depend on the quality of the Buried-Oxide (BOX). The BOX point-contact transistor current-voltage (IV) characteristics showed a large negative voltage shift following the hydrogen anneal. A retrace of the IV curve indicated strong hysteresis, and the magnitude of the hysteresis was found to be material dependent The magnitude of the IV hysteresis can be used as an indication of the quality of the BOX
  • Keywords
    SIMOX; annealing; buried layers; BOX quality; H2; SIMOX; buried oxide; current-voltage characteristics; hydrogen annealing; hysteresis; point-contact transistor; positive charge transport; Annealing; Charge carrier processes; Charge measurement; Current measurement; Electron traps; Hafnium; Hydrogen; Hysteresis; Implants; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference, 1997. Proceedings., 1997 IEEE International
  • Conference_Location
    Fish Camp, CA
  • ISSN
    1078-621X
  • Print_ISBN
    0-7803-3938-X
  • Type

    conf

  • DOI
    10.1109/SOI.1997.634973
  • Filename
    634973
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2171891