Title :
BOX quality as measured by hydrogen-anneal-induced positive charge transport
Author :
Lawrence, R.K. ; Hughes, H.L. ; Stahlbush, R.E. ; Ma, D.I. ; Twigg, M.E.
Author_Institution :
ARACOR, Sunnyvale, CA, USA
Abstract :
The transport of positive charge introduced by hydrogen annealing has been found to depend on the quality of the Buried-Oxide (BOX). The BOX point-contact transistor current-voltage (IV) characteristics showed a large negative voltage shift following the hydrogen anneal. A retrace of the IV curve indicated strong hysteresis, and the magnitude of the hysteresis was found to be material dependent The magnitude of the IV hysteresis can be used as an indication of the quality of the BOX
Keywords :
SIMOX; annealing; buried layers; BOX quality; H2; SIMOX; buried oxide; current-voltage characteristics; hydrogen annealing; hysteresis; point-contact transistor; positive charge transport; Annealing; Charge carrier processes; Charge measurement; Current measurement; Electron traps; Hafnium; Hydrogen; Hysteresis; Implants; Temperature;
Conference_Titel :
SOI Conference, 1997. Proceedings., 1997 IEEE International
Conference_Location :
Fish Camp, CA
Print_ISBN :
0-7803-3938-X
DOI :
10.1109/SOI.1997.634973
