Title :
Studies on atmospheric low temperature discharge plasma decomposition of VOCs
Author :
Oda, Tetsuji ; Yamashita, Ryuichi ; Takahashi, Tadashi
Author_Institution :
Dept. of Electr. Eng., Tokyo Univ., Japan
Abstract :
Decomposition performance and decomposition mechanism of nonthermal plasma processing (surface discharge type) for atmospheric pressure air contaminated with toxic VOCs (volatile organic compounds) were studied and following results were obtained. In dense (20,000 ppm) acetone decomposition, methyl alcohol and acetic acid increase as decomposition products of acetone with electric power till the power density level of 4×104 J/mol to air. They decrease with the electric power density over that power density level and become roughly zero. A very little toxic hydrogen cyanide increases with power density till maximum electric density tested. It was experimentally proved that the high electric field is desirable for better decomposition rate of trichloroethylene at the same discharge energy density. VOC decomposition efficiencies for dry air contaminated with 1000 ppm CFC-113 and for wet contaminated air were the same. Obtained results are not systematic but will be effective in improving the nonthermal plasma processing
Keywords :
air pollution control; gas-discharge tubes; organic compounds; plasma applications; surface discharges; CFC-113; acetic acid; acetone decomposition; atmospheric low temperature discharge plasma decomposition; decomposition mechanism; discharge energy density; dry air; methyl alcohol; nonthermal plasma processing; plasma reactors; power density level; surface discharge; toxic hydrogen cyanide; trichloroethylene; volatile organic compounds; wet contaminated air; Atmospheric-pressure plasmas; Hydrogen; Methanol; Plasma density; Plasma materials processing; Plasma temperature; Surface contamination; Surface discharges; Testing; Volatile organic compounds;
Conference_Titel :
Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-3008-0
DOI :
10.1109/IAS.1995.530471