• DocumentCode
    2172076
  • Title

    UV Curing Effects on Glass Structure and Mechanical Properties of Organosilicate Low-k Thin Films

  • Author

    Gage, David M. ; Guyer, Eric P. ; Stebbins, Jonathan F. ; Cui, Zhenjiang ; Al-Bayati, Amir ; Demos, Alex ; MacWilliams, Kenneth P. ; Dauskardt, Reinhold H.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Stanford Univ., CA
  • fYear
    2006
  • fDate
    5-7 June 2006
  • Firstpage
    149
  • Lastpage
    151
  • Abstract
    Ultra-violet radiation curing has emerged as a promising technique for enhancing the glass structure and mechanical properties of low-k organosilicate thin films. The present work examines the effects of UV curing on the adhesive and cohesive fracture properties of carbon-doped oxide low-k films. Detailed 29Si and 13C nuclear magnetic resonance spectroscopy was employed to study the effects of UV curing on glass structure. The UV curing process is demonstrated to improve the glass network by decreasing the number of terminal non-bridging bonds and increasing the number of cross-linking bonds, leading to significant increases in elastic modulus and interfacial fracture energy. However, an interesting finding is that UV curing does not lead to similar improvements in the films´ cohesive strength or their resistance to environmentally assisted cracking in chemical environments. Possible mechanisms responsible for this unexpected behavior are discussed
  • Keywords
    NMR spectroscopy; carbon; curing; elastic moduli; fracture; glass structure; low-k dielectric thin films; organic compounds; silicon; SiC; UV curing effects; adhesive fracture properties; carbon-doped oxide low-k films; cohesive fracture properties; cross-linking bonds; elastic modulus; glass structure; interfacial fracture energy; mechanical properties; non-bridging bonds; nuclear magnetic resonance spectroscopy; organosilicate low-k thin films; Chemicals; Curing; Dielectric constant; Dielectric thin films; Glass; Magnetic films; Mechanical factors; Nuclear magnetic resonance; Spectroscopy; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Interconnect Technology Conference, 2006 International
  • Conference_Location
    Burlingame, CA
  • Print_ISBN
    1-4244-0104-6
  • Type

    conf

  • DOI
    10.1109/IITC.2006.1648673
  • Filename
    1648673