Title :
A Novel CoWP Cap Integration for Porous Low-WCu Interconnects With NH3 Plasma Treatment and Low-k Top (LKT) Dielectric Structure
Author :
Kawahara, N. ; Tagami, M. ; Withers, B. ; Kakuhara, Y. ; Imura, Hajime ; Ohto, K. ; Taiji, T. ; Arita, K. ; Kurokawa, T. ; Nagase, M. ; Maruyama, Tetsuhiro ; Oda, N. ; Hayashi, Y. ; Jacobs, J. ; Sakurai, M. ; Sekine, M. ; Ueno, K.
Author_Institution :
NEC Electron. Corp., Sagamihara
Abstract :
A novel CoWP cap integration technology for lower leakage current and improved dielectric reliability is proposed for porous low-k/Cu interconnects, NH3 plasma treatment before SiCN deposition reduces leakage current and improves dielectric reliability such as time-dependent dielectric break-down (TDDB) of CoWP capped Cu interconnects. The TDDB lifetime much longer than 10 years is obtained. Moreover, the leakage current less than IE-14A/mm is obtained by low-k top (LKT) dielectric structure combined with the NH3 plasma treatment. In addition, 10% lower RC product is obtained by the LKT structure with CoWP cap
Keywords :
cobalt compounds; copper; integrated circuit interconnections; leakage currents; low-k dielectric thin films; nitrogen compounds; plasma deposition; porous materials; reliability; silicon compounds; CoWP; Cu; LKT dielectric structure; SiCN; TDDB lifetime; cap integration; copper interconnects; dielectric reliability; leakage current; low-k top dielectric structure; plasma treatment; porous low-k interconnects; Cleaning; Copper; Dielectrics; Leakage current; National electric code; Plasma measurements; Surface contamination; Surface resistance; Surface treatment; Testing;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648674
