Title :
Growth Behavior of Self-Formed Barrier Using Cu-Mn Alloys at 350 to 600oC
Author :
Iijima, J. ; Haneda, M. ; Koike, J.
Author_Institution :
Japan Sci. & Technol. Agency, Sendai
Abstract :
Cu-Mn alloys were deposited on plasma TEOS dielectric layer. A diffusion barrier layer was self-formed at the interface during annealing at elevated temperatures. The growth behavior followed a logarithmic rate law at 350 and 450 degC. No interdiffusion occurred between the alloy film and TEOS after annealing at these temperatures for 100 h. At 600 degC, grain-boundary grooving of the alloy film occurred on the barrier interface side. Estimated diffusivity at the alloy/barrier interface was of the same order as grain-boundary diffusivity of Cu
Keywords :
annealing; copper alloys; diffusion barriers; grain boundaries; manganese alloys; plasma deposition; 350 to 600 C; CuMn; alloy film; diffusion barrier layer; grain boundary diffusivity; grain boundary grooving; growth behavior; logarithmic rate law; plasma TEOS dielectric layer; self-formed barrier; Annealing; Atomic layer deposition; Conductivity; Copper alloys; Manganese alloys; Materials science and technology; Plasma materials processing; Plasma temperature; Temperature measurement; Thermal stability;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648675
