DocumentCode :
2172114
Title :
InGaAs-InAlAs-InP HEMT technology for ultra-high frequency and ultra-low noise performance
Author :
Grahn, Jan ; Starski, Piotr ; Malmkvist, Mikael ; Fridman, Malin ; Malmros, Anna ; Wang, Shumin ; Mellberg, Anders ; Zirath, Herbert
Author_Institution :
Microwave Electron. Lab., Chalmers Univ. of Technol., Goteborg, Sweden
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
124
Lastpage :
128
Abstract :
InGaAs-InAlAs-InP HEMT is facing competition from the emerging MHEMT technology. Nonetheless, for top-performing applications requiring high gain and low noise, InP HEMT is still the preferred choice. We here present results from InP HEMT development for sub-100 nm gate length designs yielding fmax above 400 GHz and ultra-low noise hybrid amplifiers with a minimum noise temperature of 1.1 K when operated under cryogenic conditions.
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; semiconductor device noise; 1.1 K; InGaAs-InAlAs-InP; InGaAs-InAlAs-InP HEMT technology; MHEMT technology; cryogenic conditions; sub-100 nm gate length designs; ultrahigh frequency performance; ultralow noise hybrid amplifiers; Consumer electronics; Frequency; Gallium arsenide; HEMTs; Indium gallium arsenide; Indium phosphide; Laboratories; Production; Space technology; mHEMTs;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517435
Filename :
1517435
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172114
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