Extremely low noise characteristics of 0.1μm Γ-gate power metamorphic HEMT on GaAs substrate

Author

Yoon, Hyung Sup ; Lee, Jin Hee ; Shim, Jae Yeob ; Hong, Ju Yeon ; Kang, Dong Min ; Lee, Kyung Ho

Author_Institution

High Speed SOC Res. Dept., Electron. & Telecommun. Res. Inst., Taejeon, South Korea

fYear

2005

fDate

8-12 May 2005

Firstpage

133

Lastpage

136

Abstract

The 0.1 μm Γ-gate power metamorphic high electron mobility transistors (MHEMTs) has been fabricated and the DC, microwave, and noise performance of the device were characterized. The MHEMT device shows the DC output characteristics having an extrinsic transconductance of 830 mS/mm and a threshold voltage of □0.62 V. The f_T and f_max obtained for the 0.1 μm×100 μm MHEMT device are 165 GHz and 275 GHz, respectively. The MHEMTs exhibit the minimum noise figure, NF_min, of 0.64 dB and associated gain of 12.4 dB at 26 GHz. The NF_min measured at 40 GHz is 1.1 dB with associated gain of 9.7 dB. This noise data is the lowest value ever reported for Γ-gate power MHEMT devices with InGaAs channel of 53% In.

Keywords

electrical conductivity; high electron mobility transistors; power HEMT; Γ-gate power metamorphic high electron mobility transistors; 0.62 V; 0.64 dB; 1.1 dB; 12.4 dB; 26 GHz; 40 GHz; 830 mS/mm; 9.7 dB; DC output characteristics; GaAs; GaAs substrate; InGaAs channel; MHEMT device; extrinsic transconductance; microwave performance; minimum noise figure; noise performance; threshold voltage; Gain; Gallium arsenide; HEMTs; MODFETs; Microwave devices; Noise figure; Noise measurement; Threshold voltage; Transconductance; mHEMTs;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 2005. International Conference on

ISSN

1092-8669

Print_ISBN

0-7803-8891-7

Type

conf

DOI

10.1109/ICIPRM.2005.1517437

Filename

1517437