DocumentCode :
2172192
Title :
Power potentiality at 94 GHz of InP HEMTs with large band gap channels
Author :
Medjdoub, E. ; Zaknoune, M. ; Wallart, X. ; Theron, D.
Author_Institution :
IEMN, Villeneuve d´´ascq, France
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
137
Lastpage :
140
Abstract :
We have investigated InP HEMT structures with large band gap channels for power amplification at 94 GHz. We show that structures containing InP an InAsP channels are very promising for power amplification at 94 GHz.
Keywords :
III-V semiconductors; energy gap; indium compounds; millimetre wave power amplifiers; power HEMT; 94 GHz; InAsP; InAsP channel; InP; InP HEMTs; large band gap channels; power amplification; power potentiality; Art; Frequency; Gain; HEMTs; Indium phosphide; MODFETs; Metallization; Photonic band gap; Power amplifiers; Power generation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517438
Filename :
1517438
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172192
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