Title :
A 3.4 V, 1 watt cellular DAMPS GaAs MESFET power amplifier with 50% efficiency
Author_Institution :
TriQuint Semicond. Inc., Hillsboro, OR, USA
Abstract :
A 3.4 V, 1 W cellular DAMPS power amplifier with 50% efficiency has been implemented and tested. The single-supply PA incorporates biasing, PMOS interface, and negative supply voltage generation on-chip, and is assembled in a TSSOP20 package with a downset paddle. The circuit achieves 30 dB of power gain, a 12 dB input return loss, and is implemented in a 20 GHz ion-implanted GaAs MESFET manufacturing process.
Keywords :
III-V semiconductors; MESFET integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; cellular radio; field effect MMIC; gallium arsenide; 1 W; 12 dB; 2 GHz; 20 GHz; 3.4 V; 30 dB; 50 percent; GaAs; MESFET power amplifier; TSSOP20 package; cellular DAMPS power amplifier; downset paddle; ion-implanted MESFET manufacturing process; onchip PMOS interface; onchip biasing; onchip negative supply voltage generation; single-supply PA; FETs; Feedback circuits; Gallium arsenide; Impedance matching; MESFET circuits; Mirrors; Power amplifiers; Radiofrequency amplifiers; Semiconductor optical amplifiers; Voltage;
Conference_Titel :
Radio Frequency Integrated Circuits (RFIC) Symposium, 1998 IEEE
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4439-1
DOI :
10.1109/RFIC.1998.682051
