DocumentCode
2172253
Title
Demonstration of high-speed (Al,Ga)As0.51Sb0.49/InP type-II uni-traveling carrier photodiodes for 1.55 μm operation
Author
Zheng, Lei ; Zhang, Xiaobing ; Zeng, Yuan ; Tatavarti, S.R. ; Watkins, S.P. ; Bolognesi, C.R.
Author_Institution
Sch. of Eng. Sci., Simon Fraser Univ., Burnaby, BC, Canada
fYear
2005
fDate
8-12 May 2005
Firstpage
144
Lastpage
147
Abstract
We demonstrate staggered ("type-II") lineup lattice-matched GaAs0.51Sb0.49/InP uni-traveling carrier photodiodes (UTC-PDs) for application near 1.55 μm. The GaAsSb absorbing layer conduction band edge lines up ΔEC=0.11 eV above that of InP, and hence allows the direct injection of photo-generated electrons into an InP collector-without any need for compositional grading around the GaAsSb/InP interface-thus simplifying epitaxial growth and device fabrication. InP/GaAsSb UTC-PDs show low dark current levels, and measurable bandwidths are limited by the test equipment. A transit-limited bandwidth of 105 GHz for a PD with a 1000 Å GaAsSb absorption layer (C:5×1018/cm3) and a 2000 Å InP collector is inferred from the variation of photoresponse bandwidth with device area.
Keywords
III-V semiconductors; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; photodiodes; 1.55 micron; 1000 Å; 105 GHz; 2000 Å; GaAs0.51Sb0.49-InP; GaAsSb absorbing layer conduction band edge; GaAsSb absorption layer; UTC-PDs; dark current; epitaxial growth; high-speed staggered GaAs0.51Sb0.49-InP unitraveling carrier photodiodes; photogenerated electrons; photoresponse bandwidth; transit-limited bandwidth; Bandwidth; Current measurement; Dark current; Electrons; Epitaxial growth; Fabrication; Gallium arsenide; Indium phosphide; Photodiodes; Test equipment;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517440
Filename
1517440
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