DocumentCode
2172282
Title
A 2.3μm cutoff wavelength photodiode on InP using lattice-matched GaInAs-GaAsSb type-II quantum wells
Author
Sidhu, R. ; Duan, N. ; Campbell, J.C. ; Holmes, A.L., Jr.
Author_Institution
Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA
fYear
2005
fDate
8-12 May 2005
Firstpage
148
Lastpage
151
Abstract
We report on a p-i-n photodiode on InP substrate using lattice matched GaInAs-GaAsSb type-II quantum wells for absorption up to 2.3 μm. Peak room temperature external quantum efficiency of 60% was observed at 2.3 μm.
Keywords
III-V semiconductors; arsenic compounds; gallium compounds; indium compounds; p-i-n photodiodes; semiconductor quantum wells; 2.3 micron; GaInAs-GaAsSb; InP; InP substrate; lattice-matched GaInAs-GaAsSb type-II quantum wells; p-i-n photodiode; peak room temperature external quantum efficiency; Absorption; Dark current; Detectors; Indium phosphide; Lattices; PIN photodiodes; Photodetectors; Photonic band gap; Quantum computing; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN
1092-8669
Print_ISBN
0-7803-8891-7
Type
conf
DOI
10.1109/ICIPRM.2005.1517441
Filename
1517441
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