DocumentCode :
2172298
Title :
Evolution of Cu Electro-Deposition Technologies for 45nm and Beyond
Author :
Shue, Winston S.
Author_Institution :
TMSC, Hsin-Chu
fYear :
2006
fDate :
5-7 June 2006
Firstpage :
175
Lastpage :
177
Abstract :
As device geometry continues to diminish, the requirement of reliable copper metallization of narrow geometries becomes very challenging. The physical, electrical, reliability and manufacturability aspects of Cu electro-deposition (ECD) require full characterization for future generations. This paper will address the key challenges of ECD modules and several some possible solutions through proper optimizations of ECD process. The extendibility of ECD beyond 45 nm-node technologies was discussed
Keywords :
copper; electrodeposition; integrated circuit metallisation; 45 nm; Cu; ECD modules; copper metallization; electrical aspects; electrodeposition technology; manufacturability aspects; narrow geometries; optimization; physical aspects; reliability aspects; Atherosclerosis; Character generation; Chemicals; Copper; Filling; Geometry; Manufacturing processes; Metallization; Nanoscale devices; Tides;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
Type :
conf
DOI :
10.1109/IITC.2006.1648680
Filename :
1648680
Link To Document :
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