Title :
Physical, Electrical, and Reliability Characterization of Ru for Cu Interconnects
Author :
Yang, C.-C. ; Spooner, T. ; Ponoth, S. ; Chanda, K. ; Simon, A. ; Lavoie, C. ; Lane, M. ; Hu, C.-K. ; Liniger, E. ; Gignac, L. ; Shaw, T. ; Cohen, S. ; McFeely, F. ; Edelstein, D.
Author_Institution :
IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY
Abstract :
Thin film characterization, electrical performance, and preliminary reliability of physical vapor-deposited (PVD) TaN/chemical vapor-deposited (CVD) Ru bilayer were carried out to evaluate its feasibility as a liner layer for back-end of line (BEOL) Cu-low k integration. Adhesion and barrier strength were studied using 4-point bend, X-ray diffraction (XRD), and triangular voltage sweep (TVS) techniques. Electrical yields and line/via resistances were measured at both single and dual damascene levels, with PVD TaN/Ta liner layer as a baseline control. Reliability studies included electromigration (EM) and current-voltage (I-V) breakdown tests
Keywords :
CVD coatings; X-ray diffraction; copper; electromigration; integrated circuit interconnections; integrated circuit reliability; ruthenium; tantalum compounds; Cu; Cu interconnects; Ru; Ru interconnects; TVS techniques; TaN-Ta; X-ray diffraction; adhesion; back-end of line integration; chemical vapor-deposition; copper-low k integration; damascene levels; electrical characterization; electromigration; physical characterization; physical vapor-deposition; reliability characterization; thin film characterization; triangular voltage sweep; Adhesives; Atherosclerosis; Chemical vapor deposition; Electric variables measurement; Electrical resistance measurement; Electromigration; Transistors; Voltage; X-ray diffraction; X-ray scattering;
Conference_Titel :
Interconnect Technology Conference, 2006 International
Conference_Location :
Burlingame, CA
Print_ISBN :
1-4244-0104-6
DOI :
10.1109/IITC.2006.1648684
