• DocumentCode
    2172432
  • Title

    Low leakage current and high dielectric constant LPD-SiO2/MOCVD-TiO2 film grown on (NH4)2Sx, treated InP substrate

  • Author

    Lee, Ming-Kwei ; Huang, Jung-Jie ; Yen, Chih-Feng

  • Author_Institution
    Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
  • fYear
    2005
  • fDate
    8-12 May 2005
  • Firstpage
    167
  • Lastpage
    170
  • Abstract
    The electrical characteristics of fluorinated silicon dioxide/titanium oxide films on ammonium sulfide treated InP were investigated. The leakage current is 1.45×10-7 A/cm2 under the electrical field at 1.5 MV/cm and the dielectric constant is 61.2.
  • Keywords
    MOCVD; leakage currents; liquid phase deposition; permittivity; silicon compounds; thin films; titanium compounds; (NH4)2Sx; (NH4)2Sx treated InP substrate; InP; MOCVD-TiO2 film; SiO2- TiO2; ammonium sulfide; dielectric constant; electrical characteristics; electrical field effect; fluorinated silicon dioxide-titanium oxide films; leakage current; liquid phase deposition-SiO2 film; Dielectric substrates; Electric variables; High K dielectric materials; High-K gate dielectrics; Indium phosphide; Leakage current; Nitrogen; Photonic band gap; Temperature; Wavelength measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 2005. International Conference on
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-8891-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2005.1517446
  • Filename
    1517446
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2172432