DocumentCode :
2172460
Title :
Electronic and optical properties of copper doped InP single crystals
Author :
Zdansky, K. ; Pekarek, L. ; Hlidek, P.
Author_Institution :
Inst. of Radio Eng. & Electron., ASCR, Prague, Czech Republic
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
171
Lastpage :
174
Abstract :
Annealed wafers of Czochralski grown copper doped InP were investigated by temperature dependent Hall measurements and low-temperature Fourier transform infrared absorption. New peaks around 2100 cm-1 were interpreted as due to Cu2+ 3d internal transitions.
Keywords :
Fourier transform spectra; Hall effect; III-V semiconductors; copper; indium compounds; infrared spectra; 2100 cm-1; Cu2+ 3d internal transitions; Czochralski grown copper doped InP; InP:Cu; annealed wafers; electronic properties; low-temperature Fourier transform infrared absorption; optical properties; single crystals; temperature dependent Hall measurements; Copper; Crystals; Electromagnetic wave absorption; Fourier transforms; Indium phosphide; Iron; Physics; Semiconductor materials; Temperature dependence; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517447
Filename :
1517447
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172460
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