DocumentCode :
2172502
Title :
Carrier lifetime of low-temperature-grown In0.53Ga0.47As on GaAs using an InGaAlAs metamorphic buffer
Author :
Jo, Seong June ; Ihn, Soo-Ghang ; Gi-Ju Lee ; Lee, Gi-Ju ; Song, Jong-In
Author_Institution :
Dept. of Inf. & Commun., Gwangju Inst. of Sci. & Technol., South Korea
fYear :
2005
fDate :
8-12 May 2005
Firstpage :
175
Lastpage :
177
Abstract :
Dependence of carrier lifetime of low-temperature-grown In0.53Ga0.47As (LT-InGaAs) on GaAs using an InGaAlAs metamorphic buffer (M-buffer) on post-growth rapid thermal annealing was investigated. Utilization of residual dislocation in the LT-InGaAs on the M-buffer was effective in reducing the carrier lifetime, producing the carrier lifetime of 2.14 ps that is comparable to that of the Be-doped LT-InGaAs.
Keywords :
III-V semiconductors; aluminium compounds; buffer layers; carrier lifetime; dislocations; gallium arsenide; indium compounds; rapid thermal annealing; semiconductor thin films; Be-doped InGaAs; GaAs; In0.53Ga0.47As; InGaAlAs; InGaAlAs metamorphic buffer; carrier lifetime; low-temperature-grown In0.53Ga0.47As; post-growth rapid thermal annealing; residual dislocation; Charge carrier lifetime; Conductivity; Doping; Epitaxial layers; Gallium arsenide; Indium gallium arsenide; Photoconducting materials; Photonic band gap; Photonic crystals; Radiative recombination;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 2005. International Conference on
ISSN :
1092-8669
Print_ISBN :
0-7803-8891-7
Type :
conf
DOI :
10.1109/ICIPRM.2005.1517448
Filename :
1517448
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2172502
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