DocumentCode
2172580
Title
Towards understanding of VOC decomposition mechanisms using nonthermal plasmas
Author
Futamura, Shigeru ; Yamamoto, Toshiaki ; Lawless, Phil A.
Author_Institution
Nat. Inst. for Resources & Environ., Ibaraki, Japan
Volume
2
fYear
1995
fDate
8-12 Oct 1995
Firstpage
1453
Abstract
Plasma chemical reactions of trichloroethylene (TCE), alkyl acetates and butane were carried out with pulsed corona and packed-bed reactors in order to get insight into the effects of reactor geometry, input energy and background atmosphere on the VOC (volatile organic compounds) reactivities. Extremely high decomposition efficiency of TCE was obtained in nitrogen, and under aerated conditions, byproduct formation was suppressed. Water depressed TCE decomposition efficiency. The initial step of plasma chemical decomposition of TCE can be ascribed to the electron attachment followed by homolysis and/or heterolysis. As for alkyl acetate decomposition, its decomposition efficiency was affected by reactor geometry and alkyl chain length. Comparable decomposition efficiencies of butane were obtained as for butyl acetate under the similar conditions, suggesting the plausible decomposition of the alkyl moiety in the alkyl acetates
Keywords
chemical reactions; corona; electron attachment; organic compounds; plasma applications; plasma collision processes; aerated conditions; alkyl acetates; alkyl chain length; alkyl moiety; background atmosphere; butane; decomposition efficiency; decomposition mechanisms; electron attachment; heterolysis; homolysis; input energy; nitrogen; nonthermal plasmas; packed-bed reactors; plasma chemical decomposition; plasma chemical reactions; pulsed corona; reactor geometry; trichloroethylene; volatile organic compounds decomposition; Atmosphere; Chemical compounds; Chemical reactors; Corona; Geometry; Inductors; Nitrogen; Organic chemicals; Plasma chemistry; Volatile organic compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Industry Applications Conference, 1995. Thirtieth IAS Annual Meeting, IAS '95., Conference Record of the 1995 IEEE
Conference_Location
Orlando, FL
ISSN
0197-2618
Print_ISBN
0-7803-3008-0
Type
conf
DOI
10.1109/IAS.1995.530473
Filename
530473
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