Spectral photoresponse of advanced interconnects: a possible solution to the ITRS most difficult characterization challenges

Author

Guedj, C. ; Arnal, V. ; Girault, V. ; Imbert, G. ; Daamen, R. ; Hoofman, R.J.O.M. ; Gaillard, F. ; Gosset, L. ; Assous, M. ; Bouchu, D. ; Mitard, J. ; Toffoli, A. ; Jousseaume, V. ; Favennec, L. ; Stich, A. ; Pamler, W. ; Gabric, Z. ; Torres, J. ; Passema

Author_Institution

CEA-DRT-LETI-DTS-CEA-GRE, Grenoble

fYear

2006

fDate

5-7 June 2006

Firstpage

207

Lastpage

209

Abstract

The spectral photoresponse of advanced interconnects is potentially interesting for the precise characterization of advanced interconnects, using standard comb test structures under illumination. This electro-optical method provides detailed information of the chemical composition of each layer of the dielectric stack via their bandgap. In addition, this non-destructive characterization is sensitive to internal strain, and is adapted to sub-32 nm generations

Keywords

electro-optical effects; integrated circuit interconnections; spectra; advanced interconnects; chemical composition; dielectric stack; electro-optical method; internal strain; nondestructive characterization; spectral photoresponse; standard comb test structures; Absorption; Chemicals; Dielectric materials; Dielectric measurements; Lighting; Optical interconnections; Photoconductivity; Photonic band gap; Silicon carbide; Strain measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Interconnect Technology Conference, 2006 International

Conference_Location

Burlingame, CA

Print_ISBN

1-4244-0104-6

Type

conf

DOI

10.1109/IITC.2006.1648695

Filename

1648695